Potential and drain current simulation of a symmetric double gated Molybdenum Disulfide (MoS2) transistor

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Publicado en 3C Tecnología. Edición Especial/Special Issue – Noviembre/November 2021



As the scaling of silicon MOSFET reaches its physical limit, research efforts have been made in exploring alternative devices. In this paper, we have examined the enhanced drain current, electrostatic potential, mobility, and electric field for a symmetric structure of Double gated Molybdenum Disulfide (MoS2) transistor. The performance of the device has been simulated using Technology Computer-Aided Design (TCAD) simulation tool. The above mentioned comparison model of drain current built by use of symmetric Double gated MoS2 transistor has shown superior performances when compared with that of Silicon transistor. There is an enhancement of 0.1 μA in its drain current and the mobility is 50 higher than the silicon based transistor, under the condition that this device has the same geometry. It was performed by incorporating the quantum mechanical effects in molybdenum disulfide (MoS2) based transistor. Due to its high performance in low power operating voltages, MoS2 transistor will be suitable for low power applications.


Palabras clave

2D material, MoS2, Drain Current, FET, TCAD Simulation tool.

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