In this paper, a cylindrical Gate All Around Nano Wire Field Effect Transistor (GAA NWFET) is compared with cylindrical Gate All Around Nano Wire Multi Bridge Channel Field Effect Transistor (GAA NWMBCFET) for sub 35nm devices using Technology Computer Aided Design (TCAD) simulation tool. Instead of one channel with equal distance in vertical and horizontal stacking, about 12 thin channels have been created in GAA NWMBCFET. The device performance has been numerically evaluated using coupled Drift-diffusion (DD) method and Shockley-Read-Hall Recombination method (SRH). The compared transfer and output characteristics of GAA NWFET and GAA NWMBCFET has been reported using the TCAD numerical simulation calibrations. The inclusion of multi bridge channel in the device has increased its current drive because of the Ultra-Thin Body (UTB). It has been accounted for that the GAA structure has a decent insusceptibility to short channel impacts.