Artículos de J. Charles Pravin

• Potential and drain current simulation of a symmetric double gated Molybdenum Disulfide (MoS2) transistor
• Analytical modeling of AlGaN/GaN/InGaN High Electron Mobility Transistors (HEMTs) through polarization effects
• Comparison and Simulation study of Cylindrical GAA NWMBCFET for sub 35nm